Photoresist as a choice of molecularly thin gate dielectrics in graphene-based devices

Ultra-thin polymeric dielectrics are of great interest for the ever-increasing development high-performance novel electronics. Up to date, fabrication polymer layers as thin few nanometers is still an extremely demanding process. Here, we report a facile method fabricate molecularly (4 nm–5 nm) plasma-hardened photoresist (PHPR) by applying O2 plasma treat surface (SPR 220) cross-link constituent novolac resin. It found that such ultra-thin PHPR also possess molecular-scale smoothness, superior chemical resistance, and thermal endurance. Furthermore, develop in situ transfer technique compatible with planar process stabilize patterning layers. By using gate dielectric tunneling barrier (breakdown strength up 500 kV/mm), graphene-PHPR-graphene (G-PHPR-G) sandwich-like structure demonstrated, exhibiting high photo-responsivity (>13 A/W) under low operating voltages (<1 V), which enables be very promising candidate low-power, flexible electronic applications.